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IRLU2905ZPBF

IRLU2905ZPBF

POWER FIELD-EFFECT TRANSISTOR, 4

IRLU2905ZPBF

IRLU2905ZPBF

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Part No :

IRLU2905ZPBF

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 4
Catalog
Transistors - FETs, MOSFETs - Single
Availability
626762 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 16 - Jun 20 2024
PDF
IRLU2905ZPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1.57 pF @ 25 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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