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SCTW35N65G2V

SCTW35N65G2V

SICFET N-CH 650V 45A HIP247

SCTW35N65G2V

SCTW35N65G2V

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Part No :

SCTW35N65G2V

Manufacturer
STMicroelectronics
Description
SICFET N-CH 650V 45A HIP247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10328 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 07 - Jan 11 2025
Type Description
Series:Automotive, AEC-Q101
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V, 20V
Rds On (Max) @ Id, Vgs:67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 20 V
Vgs (Max):+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 400 V
FET Feature:-
Power Dissipation (Max):240W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
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