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IPT026N10N5ATMA1

IPT026N10N5ATMA1

MOSFET N-CH 100V 27A/202A 8HSOF

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IC POWER MANAGEMENT

IPT026N10N5ATMA1

IPT026N10N5ATMA1

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Part No :

IPT026N10N5ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 27A/202A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11810 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
Type Description
Series:OptiMOS™5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:27A (Ta), 202A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 150A, 10V
Vgs(th) (Max) @ Id:3.8V @ 158µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8800 pF @ 50 V
FET Feature:-
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-1
Package / Case:8-PowerSFN
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