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IPP100N04S4H2AKSA1

IPP100N04S4H2AKSA1

MOSFET N-CH 40V 100A TO220-3

IPP100N04S4H2AKSA1

IPP100N04S4H2AKSA1

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Part No :

IPP100N04S4H2AKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 40V 100A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12309 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
IPP100N04S4H2AKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7.18 pF @ 25 V
FET Feature:-
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
IPP100N04S4H2AKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP100N04S4H2AKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP100N04S4H2AKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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