MOSFET N-CH 100V 23A LFPAK56
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 49mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 18 nC @ 5 V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 2130 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 75W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK56, Power-SO8 |
Package / Case: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXFX32N80PWickmann / Littelfuse |
MOSFET N-CH 800V 32A PLUS247-3 |
|
IRLM110ATFRochester Electronics |
MOSFET N-CH 100V 1.5A SOT223-4 |
|
NTTFS4C10NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.2A/44A 8WDFN |
|
IPT026N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 27A/202A 8HSOF |
|
IPD65R1K0CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.2A TO252-3 |
|
STF33N60M2STMicroelectronics |
MOSFET N-CH 600V 26A TO220FP |
|
PSMN1R5-30YLC,115Nexperia |
MOSFET N-CH 30V 100A LFPAK56 |
|
IPI100N04S3-03Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIRA26DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 25V 60A PPAK SO-8 |
|
IRF9540PBF-BE3Vishay / Siliconix |
MOSFET P-CH 100V 19A TO220AB |
|
CSD18537NQ5ATexas Instruments |
MOSFET N-CH 60V 50A 8VSON |
|
UPA2810T1L-E2-AYRochester Electronics |
MOSFET P-CH 30V 13A 8DFN |
|
FDS4470Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |