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IPD65R1K0CEAUMA1

IPD65R1K0CEAUMA1

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Part No :

IPD65R1K0CEAUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 7.2A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
705270 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
IPD65R1K0CEAUMA1 PDF
Type Description
Series:CoolMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:15.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:328 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD65R1K0CEAUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD65R1K0CEAUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD65R1K0CEAUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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