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NVMFS6H801NWFT1G

NVMFS6H801NWFT1G

MOSFET N-CH 80V 23A/157A 5DFN

DD62M32S50T2X

DD62M32S50T2X

CONN D-SUB HD PLUG 62P VERT SLDR

NVMFS6H801NWFT1G

NVMFS6H801NWFT1G

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Part No :

NVMFS6H801NWFT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 80V 23A/157A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
565256 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
NVMFS6H801NWFT1G PDF
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:23A (Ta), 157A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4120 pF @ 40 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 166W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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