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IPB60R145CFD7ATMA1

IPB60R145CFD7ATMA1

MOSFET N-CH 650V 18A TO263-3-2

IPB60R145CFD7ATMA1

IPB60R145CFD7ATMA1

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Part No :

IPB60R145CFD7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 18A TO263-3-2
Catalog
Transistors - FETs, MOSFETs - Single
Availability
093409 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
Type Description
Series:CoolMOS™ CFD7
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1503 pF @ 400 V
FET Feature:-
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB60R145CFD7ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB60R145CFD7ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB60R145CFD7ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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