MOSFET N-CH 30V 4A SOT23
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Rds On (Max) @ Id, Vgs: | 60mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5.5 nC @ 4.5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 464.3 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 1.4W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIHD3N50DT1-GE3Vishay / Siliconix |
MOSFET N-CH 500V 3A DPAK |
|
VN0808L-GRoving Networks / Microchip Technology |
MOSFET N-CH 80V 300MA TO92-3 |
|
BSZ086P03NS3GATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 13.5A/40A TSDSON |
|
FDC8601Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 2.7A SUPERSOT6 |
|
STU7N60M2STMicroelectronics |
MOSFET N-CH 600V 5A IPAK |
|
BSZ120P03NS3EGATMA1Rochester Electronics |
MOSFET P-CH 30V 11A/40A TSDSON-8 |
|
DMN3009SFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 16A PWRDI3333 |
|
PMV65XPERNexperia |
MOSFET P-CH 20V 2.8A TO236AB |
|
STF20N65M5STMicroelectronics |
MOSFET N-CH 650V 18A TO220FP |
|
BSZ0704LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 11A/40A TSDSON |
|
MCU60P06-TPMicro Commercial Components (MCC) |
MOSFET P-CH 60V 60A DPAK |
|
AUIRFS8409-7PIR (Infineon Technologies) |
MOSFET N-CH 40V 240A D2PAK |
|
RJU002N06T106ROHM Semiconductor |
MOSFET N-CH 60V 200MA UMT3 |