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BSZ120P03NS3EGATMA1

BSZ120P03NS3EGATMA1

MOSFET P-CH 30V 11A/40A TSDSON-8

BSZ120P03NS3EGATMA1

BSZ120P03NS3EGATMA1

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Part No :

BSZ120P03NS3EGATMA1

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 30V 11A/40A TSDSON-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14625 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
BSZ120P03NS3EGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.1V @ 73µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3.36 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN
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