MOSFET N-CH 40V 110A PWRDI5060-8
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 7mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2280 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1.6W (Ta) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerDI5060-8 |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTMS4917NR2GRochester Electronics |
MOSFET N-CH 30V 7.1A 8SOIC |
|
RCJ160N20TLROHM Semiconductor |
MOSFET N-CH 200V 16A LPTS |
|
NTD4906NA-35GRochester Electronics |
MOSFET N-CH 30V 10.3A/54A IPAK |
|
AUIRFR2405Rochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
DMG3418L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 4A SOT23 |
|
SIHD3N50DT1-GE3Vishay / Siliconix |
MOSFET N-CH 500V 3A DPAK |
|
VN0808L-GRoving Networks / Microchip Technology |
MOSFET N-CH 80V 300MA TO92-3 |
|
BSZ086P03NS3GATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 13.5A/40A TSDSON |
|
FDC8601Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 2.7A SUPERSOT6 |
|
STU7N60M2STMicroelectronics |
MOSFET N-CH 600V 5A IPAK |
|
BSZ120P03NS3EGATMA1Rochester Electronics |
MOSFET P-CH 30V 11A/40A TSDSON-8 |
|
DMN3009SFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 16A PWRDI3333 |
|
PMV65XPERNexperia |
MOSFET P-CH 20V 2.8A TO236AB |