MOSFET N-CH 200V 16A LPTS
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 180mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 5.25V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 26 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1370 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1.56W (Ta), 40W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | LPTS |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTD4906NA-35GRochester Electronics |
MOSFET N-CH 30V 10.3A/54A IPAK |
|
AUIRFR2405Rochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
DMG3418L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 4A SOT23 |
|
SIHD3N50DT1-GE3Vishay / Siliconix |
MOSFET N-CH 500V 3A DPAK |
|
VN0808L-GRoving Networks / Microchip Technology |
MOSFET N-CH 80V 300MA TO92-3 |
|
BSZ086P03NS3GATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 13.5A/40A TSDSON |
|
FDC8601Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 2.7A SUPERSOT6 |
|
STU7N60M2STMicroelectronics |
MOSFET N-CH 600V 5A IPAK |
|
BSZ120P03NS3EGATMA1Rochester Electronics |
MOSFET P-CH 30V 11A/40A TSDSON-8 |
|
DMN3009SFGQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 16A PWRDI3333 |
|
PMV65XPERNexperia |
MOSFET P-CH 20V 2.8A TO236AB |
|
STF20N65M5STMicroelectronics |
MOSFET N-CH 650V 18A TO220FP |
|
BSZ0704LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 11A/40A TSDSON |