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IPL65R650C6SATMA1

IPL65R650C6SATMA1

MOSFET N-CH 650V 6.7A THIN-PAK

IPL65R650C6SATMA1

IPL65R650C6SATMA1

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Part No :

IPL65R650C6SATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 6.7A THIN-PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
083408 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPL65R650C6SATMA1 PDF
Type Description
Series:CoolMOS™ C6
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 100 V
FET Feature:-
Power Dissipation (Max):56.8W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Thin-PAK (5x6)
Package / Case:8-PowerTDFN
IPL65R650C6SATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPL65R650C6SATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPL65R650C6SATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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