MOSFET N-CH 150V 78A TO247AC
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150 V |
Current - Continuous Drain (Id) @ 25°C: | 78A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 15.5mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 110 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 4460 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 310W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247AC |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK9523-75A,127Rochester Electronics |
MOSFET N-CH 75V 53A TO220AB |
|
DMP2021UTS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 18A 8TSSOP |
|
SI5468DC-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 6A 1206-8 |
|
TSM3446CX6 RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 20V 5.3A SOT26 |
|
IXFN27N80QWickmann / Littelfuse |
MOSFET N-CH 800V 27A SOT-227B |
|
IPS60R1K0PFD7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 4.7A TO251-3 |
|
AUIRFS8409-7TRLIR (Infineon Technologies) |
MOSFET N-CH 40V 240A D2PAK |
|
NTMYS014N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A/36A 4LFPAK |
|
RM35P30LDVRectron USA |
MOSFET P-CHANNEL 30V 35A TO252-2 |
|
IPA65R1K5CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 5.2A TO220 |
|
IXTQ16N50PWickmann / Littelfuse |
MOSFET N-CH 500V 16A TO3P |
|
IMW120R350M1HXKSA1IR (Infineon Technologies) |
SICFET N-CH 1.2KV 4.7A TO247-3 |
|
ISL9N327AD3STRochester Electronics |
N-CHANNEL POWER MOSFET |