MOSFET N-CH 650V 31A TO247-3
CMC 5MH 2.3A 2LN TH
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | - |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 12V |
Rds On (Max) @ Id, Vgs: | 100mOhm @ 20A, 12V |
Vgs(th) (Max) @ Id: | 6V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: | 51 nC @ 15 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 1500 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 190W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDD6682_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPW65R095C7Rochester Electronics |
MOSFET N-CH 650V 24A TO247 |
|
GKI03061Sanken Electric Co., Ltd. |
MOSFET N-CH 30V 14A 8DFN |
|
IPD50R2K0CERochester Electronics |
IPD50R2K0 - 500V COOLMOS N-CHANN |
|
IPP057N06N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO220-3 |
|
CMPDM7003 TR PBFREECentral Semiconductor |
MOSFET N-CH 50V 280MA SOT23 |
|
IPAN60R600P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6A TO220 |
|
SIHD6N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 5.4A DPAK |
|
FDI038AN06A0Rochester Electronics |
MOSFET N-CH 60V 17A/80A I2PAK |
|
FQPF9N50YDTURochester Electronics |
MOSFET N-CH 500V 5.3A TO220F-3 |
|
IRFSL3107PBFRochester Electronics |
MOSFET N-CH 75V 195A TO262 |
|
DMN6017SFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 35A POWERDI3333 |
|
SPP02N80C3Rochester Electronics |
N-CHANNEL POWER MOSFET |