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SIHD6N80E-GE3

SIHD6N80E-GE3

MOSFET N-CH 800V 5.4A DPAK

E2S-Q23B 1M

E2S-Q23B 1M

SENSOR PROX INDUCTIVE 2.5MM MOD

SIHD6N80E-GE3

SIHD6N80E-GE3

Image is for reference, please contact us to get the real picture

Part No :

SIHD6N80E-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 800V 5.4A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12925 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SIHD6N80E-GE3 PDF
Type Description
Series:E
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:827 pF @ 100 V
FET Feature:-
Power Dissipation (Max):78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252AA)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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