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IPW65R095C7

IPW65R095C7

MOSFET N-CH 650V 24A TO247

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BACC45FT22-32P10

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IPW65R095C7

IPW65R095C7

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Part No :

IPW65R095C7

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 24A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
341434 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:CoolMOS™ C7
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id:4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2140 pF @ 400 V
FET Feature:-
Power Dissipation (Max):128W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247
Package / Case:TO-247-3
IPW65R095C7 is available at GangBo-ic.com, Please review product page below for detailed information, including IPW65R095C7 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPW65R095C7 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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