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FDI038AN06A0

FDI038AN06A0

MOSFET N-CH 60V 17A/80A I2PAK

FDI038AN06A0

FDI038AN06A0

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Part No :

FDI038AN06A0

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 17A/80A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
21454 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 15 - Jun 19 2024
PDF
FDI038AN06A0 PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:17A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:124 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6.4 pF @ 25 V
FET Feature:-
Power Dissipation (Max):310W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
FDI038AN06A0 is available at GangBo-ic.com, Please review product page below for detailed information, including FDI038AN06A0 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDI038AN06A0 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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