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IRFSL3107PBF

IRFSL3107PBF

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Part No :

IRFSL3107PBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 75V 195A TO262
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 15 - Jun 19 2024
PDF
IRFSL3107PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3mOhm @ 140A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:240 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9.37 pF @ 50 V
FET Feature:-
Power Dissipation (Max):370W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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