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SI3129DV-T1-GE3

SI3129DV-T1-GE3

P-CHANNEL 80 V (D-S) MOSFET TSOP

SI3129DV-T1-GE3

SI3129DV-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SI3129DV-T1-GE3

Manufacturer
Vishay / Siliconix
Description
P-CHANNEL 80 V (D-S) MOSFET TSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
040404 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Ta), 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:82.7mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:805 pF @ 40 V
FET Feature:-
Power Dissipation (Max):2W (Ta), 4.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
SI3129DV-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI3129DV-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI3129DV-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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