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IPD40DP06NMATMA1

IPD40DP06NMATMA1

MOSFET P-CH 60V 4.3A TO252-3

IPD40DP06NMATMA1

IPD40DP06NMATMA1

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Part No :

IPD40DP06NMATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 60V 4.3A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
110411 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id:4V @ 166µA
Gate Charge (Qg) (Max) @ Vgs:6.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:260 pF @ 30 V
FET Feature:-
Power Dissipation (Max):19W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-313
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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