N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXFR200N10PWickmann / Littelfuse |
MOSFET N-CH 100V 133A ISOPLUS247 |
|
FQPF13N50Rochester Electronics |
MOSFET N-CH 500V 12.5A TO220F |
|
SI2308BDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 2.3A SOT23-3 |
|
TP2510N8-GRoving Networks / Microchip Technology |
MOSFET P-CH 100V 480MA TO243AA |
|
BSZ100N06LS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 11A/20A 8TSDSON |
|
SIR632DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 150V 29A PPAK SO-8 |
|
RJK03B9DPA-00#J5ARochester Electronics |
MOSFET N-CH 30V 30A 8WPAK |
|
NTB13N10GRochester Electronics |
MOSFET N-CH 100V 13A D2PAK |
|
IPP60R600P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6A TO220-3 |
|
BSC0703LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 15A/64A TDSON |
|
APT6025BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 25A TO247 |
|
ZVP2120GTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 200V 200MA SOT223 |
|
SI4456DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 33A 8SO |