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BSZ100N06LS3GATMA1

BSZ100N06LS3GATMA1

MOSFET N-CH 60V 11A/20A 8TSDSON

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ASA03G48-LS

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BSZ100N06LS3GATMA1

BSZ100N06LS3GATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSZ100N06LS3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 11A/20A 8TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
170417 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
BSZ100N06LS3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 23µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerVDFN
BSZ100N06LS3GATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSZ100N06LS3GATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSZ100N06LS3GATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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