MOSFET N-CH 20V 4.8A SOT23 T&R 3
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 4.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 38mOhm @ 3.6A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.3 nC @ 4.5 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 400 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 800mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPB60R120P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 26A D2PAK |
|
RU1E002SPTCLROHM Semiconductor |
MOSFET P-CH 30V 250MA UMT3F |
|
IRLH6224TRPBFRochester Electronics |
MOSFET N-CH 20V 28A/105A 8PQFN |
|
IRFR5505PBFRochester Electronics |
POWER MOSFET |
|
SPD03N60S5Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD40DP06NMATMA1IR (Infineon Technologies) |
MOSFET P-CH 60V 4.3A TO252-3 |
|
HUF75925P3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFR200N10PWickmann / Littelfuse |
MOSFET N-CH 100V 133A ISOPLUS247 |
|
FQPF13N50Rochester Electronics |
MOSFET N-CH 500V 12.5A TO220F |
|
SI2308BDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 2.3A SOT23-3 |
|
TP2510N8-GRoving Networks / Microchip Technology |
MOSFET P-CH 100V 480MA TO243AA |
|
BSZ100N06LS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 11A/20A 8TSDSON |
|
SIR632DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 150V 29A PPAK SO-8 |