English
简体中文
MOSFET N-CH 200V 25A PPAK SO-8
Image is for reference, please contact us to get the real picture
| Type | Description |
|---|---|
| Series: | TrenchFET® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200 V |
| Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Rds On (Max) @ Id, Vgs: | 70mOhm @ 5.9A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 77 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2250 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 5.4W (Ta), 96W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PowerPAK® SO-8 |
| Package / Case: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
FDH210N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V TO247-3 |
|
STL42P4LLF6STMicroelectronics |
MOSFET P-CH 40V 42A POWERFLAT |
|
FQI5N60CTURochester Electronics |
MOSFET N-CH 600V 4.5A I2PAK |
|
IRFS7734TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 183A D2PAK |
|
IRLML2244TRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 4.3A SOT23 |
|
STL8N10F7STMicroelectronics |
MOSFET N-CH 100V POWERFLAT |
|
TK6A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 6A TO220SIS |
|
IPD70R600P7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 8.5A TO252-3 |
|
IPP120N10S403AKSA1Rochester Electronics |
MOSFET N-CH 100V 120A TO220-3-1 |
|
MCAC80N045Y-TPMicro Commercial Components (MCC) |
N-CHANNEL MOSFET, DFN5060 PACKAG |
|
IPI030N10N3GXKSA1Rochester Electronics |
MOSFET N-CH 100V 100A TO262-3 |
|
FQPF9N50CTRochester Electronics |
MOSFET N-CH 500V 9A TO220F |
|
IPD70N10S312ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 70A TO252-3 |