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SI7172DP-T1-GE3

SI7172DP-T1-GE3

MOSFET N-CH 200V 25A PPAK SO-8

61500082922

61500082922

UNITIZED WHEEL A/O MED 1" DIA

SI7172DP-T1-GE3

SI7172DP-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SI7172DP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 200V 25A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12513 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
SI7172DP-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:70mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:77 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2250 pF @ 100 V
FET Feature:-
Power Dissipation (Max):5.4W (Ta), 96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
SI7172DP-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SI7172DP-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI7172DP-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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