RES 5K OHM 7W 5% AXIAL
MEMS OSC XO 166.666666MHZ LVCMOS
MOSFET N-CH 100V 120A TO220-3-1
N-CHANNEL MOSFET, DFN5060 PACKAG
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, OptiMOS™ |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3.9mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 180µA |
Gate Charge (Qg) (Max) @ Vgs: | 140 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10.12 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 250W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3-1 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MCAC80N045Y-TPMicro Commercial Components (MCC) |
N-CHANNEL MOSFET, DFN5060 PACKAG |
|
IPI030N10N3GXKSA1Rochester Electronics |
MOSFET N-CH 100V 100A TO262-3 |
|
FQPF9N50CTRochester Electronics |
MOSFET N-CH 500V 9A TO220F |
|
IPD70N10S312ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 70A TO252-3 |
|
IPD90P03P4L04ATMA2IR (Infineon Technologies) |
MOSFET P-CH 30V 90A TO252-31 |
|
NVMFS4C302NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 43A/241A 5DFN |
|
STF5N80K5STMicroelectronics |
MOSFET N-CH 800V 4A TO220FP |
|
STD4NK80ZT4STMicroelectronics |
MOSFET N-CH 800V 3A DPAK |
|
ZVNL110GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 600MA SOT223 |
|
SUD50P10-43L-BE3Vishay / Siliconix |
MOSFET P-CH 100V 9.2A/37.1A DPAK |
|
NTD4856N-1GRochester Electronics |
MOSFET N-CH 25V 13.3A/89A IPAK |
|
SSM3K48FU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 100MA USM |
|
NTP5860NLGRochester Electronics |
MOSFET N-CH 60V 220A TO220AB |