MOSFET N-CH 75V 183A D2PAK
Type | Description |
---|---|
Series: | HEXFET®, StrongIRFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 75 V |
Current - Continuous Drain (Id) @ 25°C: | 183A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 3.5mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 3.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 270 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10150 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 290W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRLML2244TRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 4.3A SOT23 |
|
STL8N10F7STMicroelectronics |
MOSFET N-CH 100V POWERFLAT |
|
TK6A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 6A TO220SIS |
|
IPD70R600P7SAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 8.5A TO252-3 |
|
IPP120N10S403AKSA1Rochester Electronics |
MOSFET N-CH 100V 120A TO220-3-1 |
|
MCAC80N045Y-TPMicro Commercial Components (MCC) |
N-CHANNEL MOSFET, DFN5060 PACKAG |
|
IPI030N10N3GXKSA1Rochester Electronics |
MOSFET N-CH 100V 100A TO262-3 |
|
FQPF9N50CTRochester Electronics |
MOSFET N-CH 500V 9A TO220F |
|
IPD70N10S312ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 70A TO252-3 |
|
IPD90P03P4L04ATMA2IR (Infineon Technologies) |
MOSFET P-CH 30V 90A TO252-31 |
|
NVMFS4C302NWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 43A/241A 5DFN |
|
STF5N80K5STMicroelectronics |
MOSFET N-CH 800V 4A TO220FP |
|
STD4NK80ZT4STMicroelectronics |
MOSFET N-CH 800V 3A DPAK |