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IPI030N10N3GXKSA1

IPI030N10N3GXKSA1

MOSFET N-CH 100V 100A TO262-3

IPI030N10N3GXKSA1

IPI030N10N3GXKSA1

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Part No :

IPI030N10N3GXKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 100A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10141 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
IPI030N10N3GXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs:206 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14.8 pF @ 50 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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