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FQI5N60CTU

FQI5N60CTU

MOSFET N-CH 600V 4.5A I2PAK

FQI5N60CTU

FQI5N60CTU

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Part No :

FQI5N60CTU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 4.5A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
34688 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
FQI5N60CTU PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:670 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
FQI5N60CTU is available at GangBo-ic.com, Please review product page below for detailed information, including FQI5N60CTU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQI5N60CTU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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