MOSFET P-CH 8V 10A 9DSBGA
CONN PLUG FMALE 2POS GOLD CRIMP
Type | Description |
---|---|
Series: | NexFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 8 V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 12.2mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.4 nC @ 4.5 V |
Vgs (Max): | -6V |
Input Capacitance (Ciss) (Max) @ Vds: | 1390 pF @ 4 V |
FET Feature: | - |
Power Dissipation (Max): | 1.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 9-DSBGA |
Package / Case: | 9-UFBGA, DSBGA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIHG20N50E-GE3Vishay / Siliconix |
MOSFET N-CH 500V 19A TO247AC |
|
AUIRFR3607Rochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
IPA65R600C6XKSA1Rochester Electronics |
MOSFET N-CH 650V 7.3A TO220 |
|
AUIRFU540ZRochester Electronics |
MOSFET N-CH 100V 35A I-PAK |
|
NDD02N60Z-1GRochester Electronics |
MOSFET N-CH 600V 2.2A IPAK |
|
BSZ097N10NS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 8A/40A TSDSON |
|
FCPF165N65S3L1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 19A TO220F-3 |
|
DMP1022UFDEQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 12V 9.1A 6UDFN |
|
NTMFS4985NFT3GRochester Electronics |
MOSFET N-CH 30V 17.5A/65A 5DFN |
|
G3R20MT12NGeneSiC Semiconductor |
SIC MOSFET N-CH 105A SOT227 |
|
IPD050N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO252-3 |
|
IPB65R190C7ATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 13A TO263-3 |
|
PMPB12UNEXNexperia |
MOSFET N-CH 20V 11.4A 6DFN |