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NDD02N60Z-1G

NDD02N60Z-1G

MOSFET N-CH 600V 2.2A IPAK

NDD02N60Z-1G

NDD02N60Z-1G

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Part No :

NDD02N60Z-1G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 2.2A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
369185 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 25 - Dec 29 2024
PDF
NDD02N60Z-1G PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:10.1 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:274 pF @ 25 V
FET Feature:-
Power Dissipation (Max):57W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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