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IPB65R190C7ATMA2

IPB65R190C7ATMA2

MOSFET N-CH 650V 13A TO263-3

IPB65R190C7ATMA2

IPB65R190C7ATMA2

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Part No :

IPB65R190C7ATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 13A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10251 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 13 - May 17 2024
PDF
IPB65R190C7ATMA2 PDF
Type Description
Series:CoolMOS™ C7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id:4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 400 V
FET Feature:-
Power Dissipation (Max):72W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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