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BSZ097N10NS5ATMA1

BSZ097N10NS5ATMA1

MOSFET N-CH 100V 8A/40A TSDSON

BSZ097N10NS5ATMA1

BSZ097N10NS5ATMA1

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Part No :

BSZ097N10NS5ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 8A/40A TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10960 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
BSZ097N10NS5ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2080 pF @ 50 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8-FL
Package / Case:8-PowerTDFN
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