MOSFET N-CH 30V 17.5A/65A 5DFN
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 17.5A (Ta), 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.4mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 30.5 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2.1 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 1.63W (Ta), 22.73W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
G3R20MT12NGeneSiC Semiconductor |
SIC MOSFET N-CH 105A SOT227 |
|
IPD050N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO252-3 |
|
IPB65R190C7ATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 13A TO263-3 |
|
PMPB12UNEXNexperia |
MOSFET N-CH 20V 11.4A 6DFN |
|
APT56F50LRoving Networks / Microchip Technology |
MOSFET N-CH 500V 56A TO264 |
|
BF20-40E6814Rochester Electronics |
RF N-CHANNEL MOSFET |
|
FQA15N70Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTD4969N-1GRochester Electronics |
MOSFET N-CH 30V 9.4A/41A IPAK |
|
IRFR4105PBFRochester Electronics |
MOSFET N-CH 55V 27A DPAK |
|
SPD01N60C3BTMA1Rochester Electronics |
MOSFET N-CH 650V 800MA TO252-3 |
|
RQ6P015SPTRROHM Semiconductor |
MOSFET P-CH 100V 1.5A TSMT6 |
|
IXTA120N04T2Wickmann / Littelfuse |
MOSFET N-CH 40V 120A TO263 |
|
TK290A60Y,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 11.5A TO220SIS |