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EPC2019

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GANFET N-CH 200V 8.5A DIE

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EPC2019

EPC2019

Image is for reference, please contact us to get the real picture

Part No :

EPC2019

Manufacturer
EPC
Description
GANFET N-CH 200V 8.5A DIE
Catalog
Transistors - FETs, MOSFETs - Single
Availability
56824 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
PDF
EPC2019 PDF
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:50mOhm @ 7A, 5V
Vgs(th) (Max) @ Id:2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs:2.5 nC @ 5 V
Vgs (Max):+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 100 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Die
Package / Case:Die
EPC2019 is available at GangBo-ic.com, Please review product page below for detailed information, including EPC2019 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for EPC2019 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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