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QTM532-12.000MBB-T

QTM532-12.000MBB-T

5.0X3.2 , 3.3V, +/-50PPM (-10 T

IPB160N04S2L03ATMA2

IPB160N04S2L03ATMA2

MOSFET N-CH 40V 160A TO263-7

IPB160N04S2L03ATMA2

IPB160N04S2L03ATMA2

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Part No :

IPB160N04S2L03ATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 160A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
792279 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
PDF
IPB160N04S2L03ATMA2 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)
Part Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:230 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6000 pF @ 15 V
FET Feature:-
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-3
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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