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IXFH6N100Q

IXFH6N100Q

MOSFET N-CH 1000V 6A TO247AD

IXFH6N100Q

IXFH6N100Q

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Part No :

IXFH6N100Q

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 1000V 6A TO247AD
Catalog
Transistors - FETs, MOSFETs - Single
Availability
842284 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IXFH6N100Q PDF
Type Description
Series:HiPerFET™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):180W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
IXFH6N100Q is available at GangBo-ic.com, Please review product page below for detailed information, including IXFH6N100Q price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXFH6N100Q to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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