DIODE GEN PURP 600V 2A PMDTM
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 2 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | SOD-128 |
Supplier Device Package: | PMDTM |
Operating Temperature - Junction: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UG2G-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 2A DO204AC |
|
BYP35A4Diotec Semiconductor |
DIODE STD D13X10.7W 400V 35A |
|
MBRS4201PT3GRochester Electronics |
RECTIFIER DIODE |
|
1N4006-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
|
CUS357,H3FToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL SCHOTTKY BARRIER DI |
|
DSEP40-03AS-TUBWickmann / Littelfuse |
POWER DIODE DISCRETES-FRED TO-26 |
|
VS-4ESH02-M3/86AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 4A TO277A |
|
P1000JDiotec Semiconductor |
DIODE STD D8X7.5 600V 10A |
|
SS26-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 2A 60V DO-214AA |
|
BAS16-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 75V 150MA SOT23 |
|
SR320 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 3A DO201AD |
|
1N4934GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO204AL |
|
SS10P4HM3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 10A TO277A |