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IRLMS2002GTRPBF

IRLMS2002GTRPBF

MOSFET N-CH 20V 6.5A MICRO6

0387205012

0387205012

CONN BARRIER STRP 12CIRC 0.375"

IRLMS2002GTRPBF

IRLMS2002GTRPBF

Image is for reference, please contact us to get the real picture

Part No :

IRLMS2002GTRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 20V 6.5A MICRO6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
812281 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 26 - Sep 30 2024
PDF
IRLMS2002GTRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:30mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1310 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro6™(SOT23-6)
Package / Case:SOT-23-6
IRLMS2002GTRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRLMS2002GTRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRLMS2002GTRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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