







MEMS OSC XO 31.2500MHZ H/LV-CMOS
XTAL OSC XO 212.5000MHZ LVPECL
GANFET NCH 40V 60A DIE
CONN HEADER VERT 8POS 2MM
| Type | Description |
|---|---|
| Series: | eGaN® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 40 V |
| Current - Continuous Drain (Id) @ 25°C: | 90A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Rds On (Max) @ Id, Vgs: | 1.5mOhm @ 37A, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 19mA |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2100 pF @ 20 V |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die |
| Package / Case: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
SUD19N20-90-BE3Vishay / Siliconix |
MOSFET N-CH 200V 19A DPAK |
|
|
PMK50XP,518Nexperia |
MOSFET P-CH 20V 7.9A 8SO |
|
|
IRFH5210TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 10A/55A 8PQFN |
|
|
TK16V60W,LVQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 15.8A 4DFN |
|
|
IPD033N06NATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-3 |
|
|
IPB200N25N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 250V 64A D2PAK |
|
|
SIA427DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 12A PPAK SC70-6 |
|
|
BSC016N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 31A/100A TDSON |
|
|
NTMFS4708NT3GRochester Electronics |
MOSFET N-CH 30V 7.8A 5DFN |
|
|
IRFU420Rochester Electronics |
MOSFET N-CH 500V 2.4A TO251AA |
|
|
IRFL014NTRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 1.9A SOT223 |
|
|
BUK96180-100A,118Rochester Electronics |
MOSFET N-CH 100V 11A D2PAK |
|
|
PSMN7R5-30MLDXNexperia |
MOSFET N-CH 30V 57A LFPAK33 |