CAP CER 1206 47NF 16V ULTRA STAB
MOSFET P-CH 20V 7.9A 8SO
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 7.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Rds On (Max) @ Id, Vgs: | 50mOhm @ 2.8A, 4.5V |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10 nC @ 4.5 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 1020 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFH5210TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 10A/55A 8PQFN |
|
TK16V60W,LVQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 15.8A 4DFN |
|
IPD033N06NATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-3 |
|
IPB200N25N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 250V 64A D2PAK |
|
SIA427DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 12A PPAK SC70-6 |
|
BSC016N04LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 31A/100A TDSON |
|
NTMFS4708NT3GRochester Electronics |
MOSFET N-CH 30V 7.8A 5DFN |
|
IRFU420Rochester Electronics |
MOSFET N-CH 500V 2.4A TO251AA |
|
IRFL014NTRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 1.9A SOT223 |
|
BUK96180-100A,118Rochester Electronics |
MOSFET N-CH 100V 11A D2PAK |
|
PSMN7R5-30MLDXNexperia |
MOSFET N-CH 30V 57A LFPAK33 |
|
TSM10N80CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 800V 9.5A ITO220AB |
|
CSD18511KTTTTexas Instruments |
MOSFET N-CH 40V 110A/194A DDPAK |