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SIA427DJ-T1-GE3

SIA427DJ-T1-GE3

MOSFET P-CH 8V 12A PPAK SC70-6

CY7C1471V33-117AXC

CY7C1471V33-117AXC

IC SRAM 72MBIT PARALLEL 100TQFP

SIA427DJ-T1-GE3

SIA427DJ-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SIA427DJ-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 8V 12A PPAK SC70-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15069 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SIA427DJ-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):8 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:16mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id:800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 5 V
Vgs (Max):±5V
Input Capacitance (Ciss) (Max) @ Vds:2300 pF @ 4 V
FET Feature:-
Power Dissipation (Max):3.5W (Ta), 19W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-70-6 Single
Package / Case:PowerPAK® SC-70-6
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