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BSC016N04LSGATMA1

BSC016N04LSGATMA1

MOSFET N-CH 40V 31A/100A TDSON

BSC016N04LSGATMA1

BSC016N04LSGATMA1

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Part No :

BSC016N04LSGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 31A/100A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
873687 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
BSC016N04LSGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:31A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12000 pF @ 20 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
BSC016N04LSGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSC016N04LSGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC016N04LSGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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