PFET, 63A I(D), 100V, 0.02OHM, 1
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 63A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 20mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4.373 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 200W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ZXMP10A17E6QTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 100V 1.3A SOT26 |
|
NTD4858NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 11.2A/73A DPAK |
|
PSMN4R3-30BL,118Nexperia |
MOSFET N-CH 30V 100A D2PAK |
|
SCT2280KECROHM Semiconductor |
SICFET N-CH 1200V 14A TO247 |
|
SSW4N60BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AO6420Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 4.2A 6TSOP |
|
APL602LGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 49A TO264 |
|
EPC2024EPC |
GANFET NCH 40V 60A DIE |
|
SUD19N20-90-BE3Vishay / Siliconix |
MOSFET N-CH 200V 19A DPAK |
|
PMK50XP,518Nexperia |
MOSFET P-CH 20V 7.9A 8SO |
|
IRFH5210TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 10A/55A 8PQFN |
|
TK16V60W,LVQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 15.8A 4DFN |
|
IPD033N06NATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-3 |