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SCT2280KEC

SCT2280KEC

SICFET N-CH 1200V 14A TO247

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SCT2280KEC

SCT2280KEC

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Part No :

SCT2280KEC

Manufacturer
ROHM Semiconductor
Description
SICFET N-CH 1200V 14A TO247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12075 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
SCT2280KEC PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:364mOhm @ 4A, 18V
Vgs(th) (Max) @ Id:4V @ 1.4mA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 18 V
Vgs (Max):+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds:667 pF @ 800 V
FET Feature:-
Power Dissipation (Max):108W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
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