MOSFET N-CH 500V 4.5A TO220-3
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 1.5Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 32 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 600 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 75W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF9333TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 9.2A 8SO |
|
SCTH35N65G2V-7AGSTMicroelectronics |
SICFET N-CH 650V 45A H2PAK-7 |
|
IPP80N06S209AKSA1Rochester Electronics |
MOSFET N-CH 55V 80A TO220-3-1 |
|
IPP070N08N3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHB8N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 8.7A TO263 |
|
FCH085N80-F155Rochester Electronics |
MOSFET N-CH 800V 46A TO247 |
|
IXFA5N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 5A TO263 |
|
AOTF5N100Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 1000V 4A TO220-3F |
|
FQB6N80TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 5.8A D2PAK |
|
RHP020N06T100ROHM Semiconductor |
MOSFET N-CH 60V 2A MPT3 |
|
FDMA6676PZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 11A 6MICROFET |
|
TK10Q60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9.7A IPAK |
|
PSMN5R3-25MLDXRochester Electronics |
PSMN5R3-25MLD - N-CHANNEL 25V, L |