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TK10Q60W,S1VQ

TK10Q60W,S1VQ

MOSFET N-CH 600V 9.7A IPAK

TK10Q60W,S1VQ

TK10Q60W,S1VQ

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Part No :

TK10Q60W,S1VQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 600V 9.7A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
373637 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
TK10Q60W,S1VQ PDF
Type Description
Series:DTMOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:430mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id:3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 300 V
FET Feature:-
Power Dissipation (Max):80W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Stub Leads, IPak
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