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IPP80N06S209AKSA1

IPP80N06S209AKSA1

MOSFET N-CH 55V 80A TO220-3-1

WA17901A02

WA17901A02

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IPP80N06S209AKSA1

IPP80N06S209AKSA1

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Part No :

IPP80N06S209AKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 55V 80A TO220-3-1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
283628 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IPP80N06S209AKSA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 125µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.36 pF @ 25 V
FET Feature:-
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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