SICFET N-CH 650V 45A H2PAK-7
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 18V, 20V |
Rds On (Max) @ Id, Vgs: | 67mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id: | 3.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 73 nC @ 20 V |
Vgs (Max): | +22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1370 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 208W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | H2PAK-7 |
Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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