MOSFET N-CHANNEL 800V 6A TO220-3
SMA-SP/MCX-RP G316D 0.75M
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800 V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 900mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1320 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 98W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDU8896_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVMYS014N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A/36A 4LFPAK |
|
IXFN44N100Q3Wickmann / Littelfuse |
MOSFET N-CH 1000V 38A SOT227B |
|
AOTF8N50Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 500V 8A TO220-3F |
|
IRL640ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 18A TO220-3 |
|
IRF830Rochester Electronics |
MOSFET N-CH 500V 4.5A TO220-3 |
|
IRF9333TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 9.2A 8SO |
|
SCTH35N65G2V-7AGSTMicroelectronics |
SICFET N-CH 650V 45A H2PAK-7 |
|
IPP80N06S209AKSA1Rochester Electronics |
MOSFET N-CH 55V 80A TO220-3-1 |
|
IPP070N08N3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHB8N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 8.7A TO263 |
|
FCH085N80-F155Rochester Electronics |
MOSFET N-CH 800V 46A TO247 |
|
IXFA5N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 5A TO263 |